AI/ML-based model to investigate the variability of the fully depleted SOI MOSFET
Fields of Study & Subjects
Advancements in Semiconductor Devices and Circuit Design
Silicon Carbide Semiconductor Technologies
Ferroelectric and Negative Capacitance Devices
Publication details
- Journal / source
- Journal of Computational Electronics
- Publisher
- Springer Science and Business Media LLC
- Volume
- 25
- Issue
- 2
- Publication date
- 26 February 2026
- Language
- EN