Pressure-dependent band alignment in ZnO/GaN bilayer heterostructures for UV optoelectronics

Journal of Computational Electronics 2026

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Authors: S. Gaurav, Shefali Kanwar, S. Shankar

DOI: 10.1007/s10825-026-02609-1

Cited by: 1

References: 33

Fields of Study & Subjects

GaN-based semiconductor devices and materials ZnO doping and properties Ga2O3 and related materials

References 33