Band alignment of amorphous Ge2S3 and GaN(0001)

Journal of Materials Science 2026

View at publisher
Authors: M. Grodzicki, Agata Sabik, P. Mazur, A. K. Tołłoczko, Rafał Lewandków, Artur Trembułowicz, Dominika Majchrzak, J. Serafińczuk, Jan Kopaczek, Jacek Brona, R. Kudrawiec
DOI: 10.1007/s10853-026-12169-1
Cited by: 0
References: 43

Fields of Study & Subjects

GaN-based semiconductor devices and materials Semiconductor materials and interfaces Phase-change materials and chalcogenides

Publication details

Journal / source
Journal of Materials Science
Volume
61
Issue
9
Pages
6042–6052
Publication date
28 January 2026
Language
EN