Synergistic application model of CAE and TCAD for displacement radiation effects in SiGe HBTs
Fields of Study & Subjects
Radiation Effects in Electronics
Fusion materials and technologies
Advancements in Semiconductor Devices and Circuit Design
Publication details
- Journal / source
- Journal of Materials Science
- Volume
- 61
- Issue
- 11
- Pages
- 7594–7607
- Publication date
- 12 February 2026
- Language
- EN