Forward and reverse characteristics of 4H-SiC Schottky diodes with and without ion implantation and its temperature dependent properties

Journal of Materials Science Materials in Electronics 2026

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Authors: Zicheng Lu, Yi Cui, Fanpeng Zeng, Lingling Lai, Zhixin Liu, Kuan Yew Cheong, Jisheng Han

DOI: 10.1007/s10854-026-17145-8

Cited by: 1

References: 30

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Pulsed Power Technology Applications Semiconductor materials and interfaces

References 30