Defect-engineered resistive switching and NDR behavior in Mn-doped SnO2 memristors

Journal of Materials Science Materials in Electronics 2026

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Authors: Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov, Noiba U. Botirova, Javohir Sh. Khudoykulov, Ra’no Sh. Sharipova

DOI: 10.1007/s10854-026-17527-y

Cited by: 1

References: 29

Fields of Study & Subjects

Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Transition Metal Oxide Nanomaterials

References 29