Influence of annealing temperature on the dielectric properties of (Al2O3)x(HfO2)(1−x)

Journal of Materials Science Materials in Electronics 2026

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Authors: Yifan Jia, Tianjiao Xiao, Zhan Wang, Xiangtai Liu, Haochen Wan, Qin Lu, Shaoqing Wang, Haifeng Chen

DOI: 10.1007/s10854-026-17646-6

Cited by: 1

References: 35

Fields of Study & Subjects

Semiconductor materials and devices Ferroelectric and Negative Capacitance Devices Advancements in Semiconductor Devices and Circuit Design

References 35