Enhanced charge storage and ferroelectric-like switching in PLD-grown Zn0.85Mg0.15O MIM capacitors via thickness engineering for non-volatile memory devices

Journal of Materials Science Materials in Electronics 2026

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Authors: Sunena Subhash, Sudheendran Kooriyattil, T.S. Akhil Raman, S. Shyam Shankar, K. C. James Raju
DOI: 10.1007/s10854-026-17819-3
Cited by: 1
References: 84

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Advanced Memory and Neural Computing Ferroelectric and Piezoelectric Materials

Publication details

Journal / source
Journal of Materials Science Materials in Electronics
Publisher
Springer Science and Business Media LLC
Volume
37
Issue
18
Publication date
1 June 2026
Language
EN