Advances in high dielectric constant cerium oxide and its doped variants for the surface passivation of 4H-silicon carbide and silicon semiconductors
Fields of Study & Subjects
Semiconductor materials and devices
Semiconductor materials and interfaces
Copper Interconnects and Reliability
Publication details
- Journal / source
- Optical and Quantum Electronics
- Publisher
- Springer Science and Business Media LLC
- Volume
- 58
- Issue
- 7
- Publication date
- 14 May 2026
- Language
- EN