Advances in high dielectric constant cerium oxide and its doped variants for the surface passivation of 4H-silicon carbide and silicon semiconductors

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Authors: Abdul Shekkeer Kammutty Musliyarakath, 芦秀玲, Hock Jin Quah
Cited by: 1
References: 195

Fields of Study & Subjects

Semiconductor materials and devices Semiconductor materials and interfaces Copper Interconnects and Reliability

Publication details

Journal / source
Optical and Quantum Electronics
Publisher
Springer Science and Business Media LLC
Volume
58
Issue
7
Publication date
14 May 2026
Language
EN