High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs

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Authors: Qian Yu, Ling Yang, Long Zhang, Chunzhou Shi, Bin Hou, Mei Wu, Meng Zhang, Hao Lu, Xu Zou, Wenze Gao, Xiaohua Ma, Yue Hao
Cited by: 0
References: 23

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Advanced Power Amplifier Design

Publication details

Journal / source
Science China Information Sciences
Volume
69
Issue
2
Publication date
4 January 2026
Language
EN