High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Silicon Carbide Semiconductor Technologies
Advanced Power Amplifier Design
Publication details
- Journal / source
- Science China Information Sciences
- Volume
- 69
- Issue
- 2
- Publication date
- 4 January 2026
- Language
- EN