High ON/OFF and high FoM of fmax×BV×Lg InAlN/GaN HEMTs by using polycrystalline-AlN cap

Science China Information Sciences 2026

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Authors: Shiming Li, Hao Lu, Ling Yang, Mei Wu, Bin Hou, Meng Zhang, Xiaohua Ma, Yue Hao
DOI: 10.1007/s11432-025-4572-5
Cited by: 1
References: 51

Fields of Study & Subjects

GaN-based semiconductor devices and materials Acoustic Wave Resonator Technologies Advanced Power Amplifier Design

Publication details

Journal / source
Science China Information Sciences
Publisher
Springer Science and Business Media LLC
Volume
69
Issue
3
Publication date
14 January 2026
Language
EN