InGaN-based high-speed mini laser diode surpasses PAM-4 visible light links by over 30 Gbps
Fields of Study & Subjects
Optical Wireless Communication Technologies
GaN-based semiconductor devices and materials
Ga2O3 and related materials
Publication details
- Journal / source
- Science China Information Sciences
- Publisher
- Springer Science and Business Media LLC
- Volume
- 69
- Issue
- 3
- Publication date
- 3 February 2026
- Language
- EN