Over 3 GW/cm2 low leakage vertical β-Ga2O3 Schottky rectifier featuring self-aligned multi-zone junction termination extension

Science China Information Sciences 2026

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Authors: Jiangbin Wan, Hengyu Wang, Tiancheng Tao, Haoyuan Cheng, Ce Wang, Chi Zhang, K. C. Sheng

DOI: 10.1007/s11432-025-4617-1

Cited by: 1

References: 4

Fields of Study & Subjects

Ga2O3 and related materials GaN-based semiconductor devices and materials Transition Metal Oxide Nanomaterials

References 4