Spacer–Gate Synergy in Tri-Material FinFETs: Performance Analysis for RF/Analog Applications
Fields of Study & Subjects
Advancements in Semiconductor Devices and Circuit Design
Semiconductor materials and devices
Ferroelectric and Negative Capacitance Devices
Publication details
- Journal / source
- Journal of Electronic Materials
- Publisher
- Springer Science and Business Media LLC
- Volume
- 55
- Issue
- 4
- Pages
- 3807–3821
- Publication date
- 4 February 2026
- Language
- EN