Mechanism of Nitrogen Doping Concentration Drift in 4H-SiC Epitaxial Layers Induced by Ring Coating Thickness

Journal of Electronic Materials 2026

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Authors: Weiliang Zhong, Jiahui Wang, Jiulong Wang, Yong Yao, Haifeng Yang, Pengxiang Hou, Le Yu, Zheyang Li, Rui Jin

DOI: 10.1007/s11664-026-12708-1

Cited by: 2

References: 39

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Diamond and Carbon-based Materials Research GaN-based semiconductor devices and materials

References 39