Effect of Tin Doping on the Bandgap and Electrical and Thermoelectric Properties of Narrow-Gap Semiconducting α-SrSi2

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Authors: Rena Hatanaka, Haruno Kunioka, Hiroya Oishi, Hirari Suzuki, Taishi Miyagawa, Yoji IMAI, Tsutomu Iida
Cited by: 0
References: 22

Fields of Study & Subjects

Advanced Thermoelectric Materials and Devices Electrical and Thermal Properties of Materials Advanced Semiconductor Detectors and Materials

Publication details

Journal / source
Journal of Electronic Materials
Volume
55
Issue
5
Pages
4064–4087
Publication date
12 March 2026
Language
EN