Switching Layer Design and Its Influence on RRAM Power Efficiency

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Authors: John F. Hardy, Guilherme S. Y. Giardini, Jack Garrard, Carlo daCunha
Cited by: 0
References: 50

Fields of Study & Subjects

Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Phase-change materials and chalcogenides

Publication details

Journal / source
Journal of Electronic Materials
Volume
55
Issue
6
Pages
4975–4987
Publication date
12 March 2026
Language
EN