Physical Insights into the Reliability of ES Fin-TFETs: An Analysis of Interface Traps, Noise, and Temperature-Induced Effects

Silicon 2026

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Authors: B. V. Rao, Parasa Sivadurgarao, Arun Kumar, Brinda Bhowmick

DOI: 10.1007/s12633-025-03629-5

Cited by: 2

References: 32

Fields of Study & Subjects

Advancements in Semiconductor Devices and Circuit Design Ferroelectric and Negative Capacitance Devices Semiconductor materials and devices

References 32