Analytical Modeling and Performance Evaluation of Nanoscale Tri-Material Tri-Gate MgZnO/ZnO HEMTs on Silicon Substrate for Enhanced Short-Channel Suppression and Carrier Transport
Fields of Study & Subjects
Ferroelectric and Negative Capacitance Devices
Semiconductor materials and devices
ZnO doping and properties
Publication details
- Journal / source
- Silicon
- Publisher
- Springer Science and Business Media LLC
- Volume
- 18
- Issue
- 6
- Pages
- 2229–2256
- Publication date
- 31 January 2026
- Language
- EN