The barrier height and interface states of Au/n-GaN Schottky diodes exhibit a triple Gaussian distribution

Indian Journal of Physics 2026

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Authors: Hogyoung Kim

DOI: 10.1007/s12648-026-03940-w

Cited by: 0

References: 54

Fields of Study & Subjects

Semiconductor materials and interfaces GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies

References 54