Molecular Beam Epitaxial Growth of α-In2Se3 Thin Films on Hexagonal Boron Nitride and Device Applications

Electronic Materials Letters 2026 Open access

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Authors: I. Kim, Wonwoo Suh, Jonghwa Kim, Myungjun Cha, Eunsu Lee, S. G. Kim, Hyunyong Choi, Celesta S. Chang, Gyu‐Chul Yi
DOI: 10.1007/s13391-026-00627-6
Cited by: 1
References: 25

Abstract

Abstract We report the molecular beam epitaxial growth and device applications of α-In 2 Se 3 thin films on hexagonal boron nitride ( h -BN). We employed a two-step growth approach to grow thin films. Electron microscopy reveals uniform surfaces and a heteroepitaxial relationship between α-In 2 Se 3 and h -BN, even though the α-In 2 Se 3 / h -BN is highly lattice-mismatched. Furthermore, the electrical and optoelectrical characteristics of the α-In 2 Se 3 layers were examined by fabricating corresponding field-effect transistors and photodetectors. Graphical Abstract

Fields of Study & Subjects

2D Materials and Applications GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices

Publication details

Journal / source
Electronic Materials Letters
Publisher
Springer Science and Business Media LLC
Volume
22
Issue
3
Pages
280–287
Publication date
17 January 2026
Language
EN