Performance optimization of MFIS nanowire FeFET using silicon/InAs materials through TCAD simulation
Fields of Study & Subjects
Advancements in Semiconductor Devices and Circuit Design
Ferroelectric and Negative Capacitance Devices
2D Materials and Applications
Publication details
- Journal / source
- Journal of the Korean Physical Society
- Volume
- 88
- Issue
- 10
- Pages
- 1128–1141
- Publication date
- 4 February 2026
- Language
- EN