Performance optimization of MFIS nanowire FeFET using silicon/InAs materials through TCAD simulation

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Authors: Avinash Kumar, Balwinder Raj
Cited by: 0
References: 36

Fields of Study & Subjects

Advancements in Semiconductor Devices and Circuit Design Ferroelectric and Negative Capacitance Devices 2D Materials and Applications

Publication details

Journal / source
Journal of the Korean Physical Society
Volume
88
Issue
10
Pages
1128–1141
Publication date
4 February 2026
Language
EN