Ultra-robust Y-doped hafnium oxide ferroelectric memristors for intelligent edge computing

Science China Materials 2026

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Authors: Biao Yang, Weifeng Zhang, Pengfei Li, Yongqing Jia, Xiaobing Yan

DOI: 10.1007/s40843-025-3817-3

Cited by: 2

References: 52

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Advanced Memory and Neural Computing Advanced Sensor and Energy Harvesting Materials

References 52