Study of Self-heating Effect on the DC and RF Characteristics of a GaN HEMT
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Silicon Carbide Semiconductor Technologies
Advancements in Semiconductor Devices and Circuit Design
Publication details
- Journal / source
- Iranian Journal of Science
- Volume
- 50
- Issue
- 4
- Pages
- 1581–1590
- Publication date
- 10 February 2026
- Language
- EN