Atomic Layer Etching for Extreme Manufacturing: Pushing the Limits of Atomic Scale Precision

Atomic layer etching (ALE) has emerged as a transformative technique for achieving atomic and close-to-atomic scale manufcturing, addressing the critical challenges in scaling, three-dimensional (3D) integration, and defect management inherent to advanced nanofabrication. Built on decades of advancements in plasma processing and atomic layer deposition (ALD), ALE is a self-limiting and cyclic process that enables unparalleled control over the etch depth resolution, surface smoothness, and material selectivity. In this review, the underlying chemical and physical mechanisms of ALE are outlined, with focus on the reaction dynamics at plasma–surface interfaces, defect-sensitive chemistry, and synergistic integration with ALD. Recent technological advancements are highlighted through case studies, demonstrating the capacity of ALE for selective material removal in heterogeneous systems, precise control of the surface morphology in high-aspect-ratio structures, and deterministic 3D nanopatterning for emerging architectures. This review further explores the unique role of ALE in cutting-edge fields such as extreme manufacturing and constructs a system logic framework spanning computational simulation and mechanisms to future applications, highlighting ALE as a driving force for the strategic development of future multi-domain technology. Current challenges are critically examined, and forward-looking perspectives are provided, indicating the potential of ALE as a cornerstone in the fabrication of next-generation semiconductors. By integrating fundamental mechanistic insights with industrial strategies, this review bridges theoretical understanding and practical applications while charting a roadmap for advancing ALE as a transformative approach to atomic-precision manufacturing.