Estimation method for the remaining useful life of silicon mosfets based on degradation models and deep reflections on its technical educational requirements

Journal of Power Electronics 2026

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Authors: Lingfeng Shao, Guoqing Xu, Weiwei Wei
DOI: 10.1007/s43236-026-01294-4
Cited by: 1
References: 34

Fields of Study & Subjects

Semiconductor materials and devices Silicon Carbide Semiconductor Technologies Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source
Journal of Power Electronics
Publisher
Springer Science and Business Media LLC
Publication date
4 March 2026
Language
EN