A comprehensive review of suitable interfacial insulating layer selection, I-V characteristics and working parameters in MIS structured Schottky diodes for multifunctional optoelectronic applications

Schottky Barrier diode (SBD) with Metal- Insulator- Semiconductor (MIS) structure is an important functional part for a broad spectrum of optoelectronic applications. This review paper illustrates the developments in the field of MIS structured SBDs that offers enhanced performance and switching speed. An interfacial insulating layer between the metal and semiconductors plays an inevitable part in achieving this performance. A lot of research is still going on in the development of new insulating materials with improved properties. The variation in Schottky barrier height, reduction in the leakage current, switching action etc. depends on the quality of insulating interfacial layer. Advancements in the studies on MIS structured Schottky diodes are discussed herein with special reference to the development of new interfacial insulating layer materials, manufacturing technologies and device applications. Different Schottky diode structures, conduction mechanisms, equations, parameters and directions for potential future development are outlined.