Raman-guided optimization of sputtered γ-In2Se3 transistors through channel-thickness and annealing control
Fields of Study & Subjects
2D Materials and Applications
Phase-change materials and chalcogenides
Thin-Film Transistor Technologies
Publication details
- Journal / source
- Applied Materials Today
- Volume
- 49
- Pages
- 103174–103174
- Publication date
- 7 March 2026
- Language
- EN