In situ non-destructive tracking of complex defect evolution on 4H-SiC homoepitaxial surfaces: Formation mechanisms and dynamic behavior of morphological defects

Applied Surface Science 2026

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Authors: Mengda Wang, C. Tian, Runsheng Zheng, Yan Liu, ZhenBang Liu, Qingbo Li, Y. X. Li, Yongfu Li, Fapeng Yu, Hongyan Zhang, Yanmin Zong, Xian Zhao
DOI: 10.1016/j.apsusc.2026.165951
Cited by: 2
References: 43

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Silicon and Solar Cell Technologies Thin-Film Transistor Technologies

Publication details

Journal / source
Applied Surface Science
Publisher
Elsevier BV
Volume
726
Pages
165951–165951
Publication date
16 January 2026
Language
EN