Semi-quantitative and atomistic etch thermodynamics of nanoscale dislocations in free-standing GaN crystals via Fenton reaction
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Semiconductor Quantum Structures and Devices
Ion-surface interactions and analysis
Publication details
- Journal / source
- Applied Surface Science
- Publisher
- Elsevier BV
- Volume
- 727
- Pages
- 165962–165962
- Publication date
- 16 January 2026
- Language
- EN