Semi-quantitative and atomistic etch thermodynamics of nanoscale dislocations in free-standing GaN crystals via Fenton reaction

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Authors: Aoxue Xu, Gang Li, Yuzhen Han, Lei Zhang, Xiangang Xu, Lihuan Wang
Cited by: 1
References: 43

Fields of Study & Subjects

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Ion-surface interactions and analysis

Publication details

Journal / source
Applied Surface Science
Publisher
Elsevier BV
Volume
727
Pages
165962–165962
Publication date
16 January 2026
Language
EN