Wafer-scale bubble-free Si-on-SiC fabricated by plasma activated bonding technology

Applied Surface Science 2026 Open access

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Authors: Zeming Huang, Yuan Gao, Tianhao Zhou, Chao Yang, Wenkai Liu, Yongwei Chang, Y. W. Liu, Ding Wang, Zhongying Xue, Wei Xing
DOI: 10.1016/j.apsusc.2026.165990
Cited by: 1
References: 35

Abstract

The 6-inch bubble-free, stressless Si-on-SiC (SOSiC) wafer was fabricated for improving heat dissipation and radio frequency (RF) performance of RF front-end modules applied in 6G technology. Coplanar waveguide (CPW) devices fabricated on SOSiC wafer show higher effective resistivity (ρ eff ≥ 10 3 Ω·cm, 100 MHz-11 GHz) and lower attenuation coefficients (α ≤ 0.20 dB/mm, 100 MHz-13 GHz) than those on HR-SOI. The effective thermal conductivity (TC eff ) of SOSiC wafers with BOX thicknesses of 10 nm, 16 nm, and 22 nm is 58.4 MW/m 2 ·K, 50.2 MW/m 2 ·K, and 40.9 MW/m 2 ·K, respectively. The newly fabricated SOSiC wafer has the potential for 6G front-end applications.

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies 3D IC and TSV technologies Thermal properties of materials

Publication details

Journal / source
Applied Surface Science
Publisher
Elsevier BV
Volume
727
Pages
165990–165990
Publication date
19 January 2026
Language
EN