The mechanism of hydroxylamine-promoted Fenton-like reaction for improving GaN CMP process

Applied Surface Science 2026

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Authors: Shouzhi Wang, Qiubo Li, Xuanyi Zhao, YuZhu Wu, Tong Peng, Qun Wang, Mengxin Wang, Mengxin Wang, Mengxin Wang, Ge Tian, Xiangang Xu, Guodong Wang
+4 more Shouzhi Wang, Xiangang Xu, Lei Zhang, Shouzhi Wang
DOI: 10.1016/j.apsusc.2026.166055
Cited by: 1
References: 36

Fields of Study & Subjects

GaN-based semiconductor devices and materials Ga2O3 and related materials ZnO doping and properties

Publication details

Journal / source
Applied Surface Science
Publisher
Elsevier BV
Volume
727
Pages
166055–166055
Publication date
25 January 2026
Language
EN