Chemical heterogeneity induced negative differential resistance in tantalum oxide memristor devices
Fields of Study & Subjects
Advanced Memory and Neural Computing
Ferroelectric and Negative Capacitance Devices
Transition Metal Oxide Nanomaterials
Publication details
- Journal / source
- Applied Surface Science
- Publisher
- Elsevier BV
- Volume
- 730
- Pages
- 166243–166243
- Publication date
- 13 February 2026
- Language
- EN