Surface activated bonding of (100)-β-Ga2O3 and Si: Annealing-induced evolution of interfacial microstructure and its effects on thermal transport

Applied Surface Science 2026

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Authors: Yongfeng Qu, Wenbo Hu, Fei Wang, Boquan Ren, Hongxing Wang, Jijun Ding, Haixia Chen

DOI: 10.1016/j.apsusc.2026.166258

Cited by: 2

References: 43

Fields of Study & Subjects

Ga2O3 and related materials GaN-based semiconductor devices and materials Transition Metal Oxide Nanomaterials

References 43