High-temperature interfacial stability of In2O3 FETs with SiO2 versus Al2O3 insulators enabling 3 nm channel scaling

Applied Surface Science 2026

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Authors: Hye-Jin Oh, Jun-Yeoub Lee, Jun Young Beom, Ji Eun Sun, Chi-Hoon Lee, Chang-Kyun Park, Chang-Kyun Park, Minhyuk Kim, Minhyuk Kim, Junseok Lee, Seunghyun Cho, Donghwan Lee
+2 more Jinhyuk Yoo, Jin‐Seong Park
DOI: 10.1016/j.apsusc.2026.166278
Cited by: 1
References: 22

Fields of Study & Subjects

Semiconductor materials and devices Ferroelectric and Negative Capacitance Devices Thin-Film Transistor Technologies

Publication details

Journal / source
Applied Surface Science
Publisher
Elsevier BV
Volume
730
Pages
166278–166278
Publication date
10 February 2026
Language
EN