Study on the application of interface modulation technology in AlN-based AlGaN/GaN HEMT devices
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Silicon Carbide Semiconductor Technologies
Ga2O3 and related materials
Publication details
- Journal / source
- Applied Surface Science
- Publisher
- Elsevier BV
- Volume
- 730
- Pages
- 166336–166336
- Publication date
- 15 February 2026
- Language
- EN