Study on the application of interface modulation technology in AlN-based AlGaN/GaN HEMT devices

View at publisher
Authors: Yaolong Dong, Jin Rao, Yachao Zhang, Wenjun Liu, Baiqi Wang, Huantao Duan, Yue Hao, Jincheng Zhang
Cited by: 1
References: 42

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Ga2O3 and related materials

Publication details

Journal / source
Applied Surface Science
Publisher
Elsevier BV
Volume
730
Pages
166336–166336
Publication date
15 February 2026
Language
EN