Wafer-Scale integration of high-Ge content SGOI via hot condensation of Ge for Si-based applications

Applied Surface Science 2026 Open access

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Authors: Antti Takala, Olivier Gourhant, Ismail Madaci, Christophe Duluard, Damien Monteil, Caroline Lacomme, Tony Printemps, Théo Levert, Luc Favre, Isabelle Berbezier
DOI: 10.1016/j.apsusc.2026.166396
Cited by: 2
References: 40

Abstract

• Scalable fabrication of uniform and defect free SGOI layer by Ge condensation. • High germanium concentration (85%) in ultrathin (5 nm) SGOI layer. • Ge concentration upper limit in SGOI substrate, produced by condensation process. • Industrial substrate fabrication for Ge and III-V semiconductors epitaxial regrowth. It was reported recently that hot condensation process can produce fully strained or relaxed Ge-rich (

Fields of Study & Subjects

Nanowire Synthesis and Applications Silicon and Solar Cell Technologies Semiconductor materials and devices

Publication details

Journal / source
Applied Surface Science
Publisher
Elsevier BV
Volume
731
Pages
166396–166396
Publication date
20 February 2026
Language
EN