Formation mechanism of oxygen-rich interfaces in SiCN Fusion bonding induced by synergistic plasma activation
Fields of Study & Subjects
3D IC and TSV technologies
Semiconductor materials and devices
Silicon Carbide Semiconductor Technologies
Publication details
- Journal / source
- Applied Surface Science
- Volume
- 731
- Pages
- 166455–166455
- Publication date
- 25 February 2026
- Language
- EN