Ultrahigh performance of ε-Ga2O3 deep-ultraviolet photodetectors grown on sapphire substrates via SiO2 and Al2O3 capping layers
Fields of Study & Subjects
Ga2O3 and related materials
Advanced Photocatalysis Techniques
GaN-based semiconductor devices and materials
Publication details
- Journal / source
- Applied Surface Science
- Publisher
- Elsevier BV
- Volume
- 731
- Pages
- 166490–166490
- Publication date
- 2 March 2026
- Language
- EN