Trap-mediated current transport in tunneling layer of Ni/Al2O3/β-Ga2O3 diodes: effect of proton irradiation
Fields of Study & Subjects
Ga2O3 and related materials
GaN-based semiconductor devices and materials
Photocathodes and Microchannel Plates
Publication details
- Journal / source
- Applied Surface Science
- Publisher
- Elsevier BV
- Volume
- 735
- Pages
- 166671–166671
- Publication date
- 22 March 2026
- Language
- EN