Trap-mediated current transport in tunneling layer of Ni/Al2O3/β-Ga2O3 diodes: effect of proton irradiation

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Authors: Yushan Song, L. Zhou, Teng Ma, Liang Chen, Hao Chen, Song Li, Zhifeng Lei, Xiaoping Ouyang
Cited by: 3
References: 66

Fields of Study & Subjects

Ga2O3 and related materials GaN-based semiconductor devices and materials Photocathodes and Microchannel Plates

Publication details

Journal / source
Applied Surface Science
Publisher
Elsevier BV
Volume
735
Pages
166671–166671
Publication date
22 March 2026
Language
EN