Oxygen-source-driven dielectric and interface engineering of ALD Al2O3 for high-performance and stable p-type SnO thin-film transistors
Fields of Study & Subjects
Thin-Film Transistor Technologies
ZnO doping and properties
Semiconductor materials and devices
Publication details
- Journal / source
- Applied Surface Science
- Publisher
- Elsevier BV
- Volume
- 738
- Pages
- 166950–166950
- Publication date
- 20 April 2026
- Language
- EN