Atomic layer oxidation of silicon by O2 plasma: Initial oxidation and surface passivation

Applied Surface Science 2026 Open access

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Authors: Shota Nunomura, Kunihiro Kamataki, Kosuke Matsuzaki, Masaharu Shiratani
DOI: 10.1016/j.apsusc.2026.167206
Cited by: 1
References: 33

Abstract

Atomic layer oxidation of silicon (Si) is studied in a low-pressure oxygen (O 2 ) plasma, in terms of initial oxidation and surface passivation. The initial oxidation is classified into three stages of rapid growth, growth saturation, and linear growth for nanometer-thick silicon dioxide (SiO 2 ) layer formation. Interestingly, the rapid growth is observed until the first layer of Si is fully oxidized, where the surface passivation is deteriorated. The growth saturation is then recognized as a reduced growth rate. Finally, the linear growth is observed during oxidation of the second and subsequent Si layers, where the surface passivation is significantly improved.

Fields of Study & Subjects

Plasma Diagnostics and Applications Silicon and Solar Cell Technologies Semiconductor materials and devices

Publication details

Journal / source
Applied Surface Science
Publisher
Elsevier BV
Volume
742
Pages
167206–167206
Publication date
15 May 2026
Language
EN