Improved resistive switching in Pt/Fe2O3/Ag memristors via introduction of Fe2O3 seed layer

Applied Surface Science 2026

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Authors: Han Gyeol Kim, Minseok Choi, Joonghoe Dho
DOI: 10.1016/j.apsusc.2026.167531
Cited by: 1
References: 34

Fields of Study & Subjects

Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Magnetic properties of thin films

Publication details

Journal / source
Applied Surface Science
Publisher
Elsevier BV
Volume
746
Pages
167531–167531
Publication date
14 June 2026
Language
EN