Enhanced ferroelectricity in undoped-HfO2 thin films via oxygen vacancy modulation

Applied Surface Science 2026

View at publisher
Authors: Liuyi Cai, Wei Huang, Lele Ren, Bao‐Wen Li, Chitengfei Zhang, Chongjie Wang, Cuicui Li, Rong Tu, S Q Zhang
DOI: 10.1016/j.apsusc.2026.167558
Cited by: 1
References: 51

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Semiconductor materials and devices Ferroelectric and Piezoelectric Materials

Publication details

Journal / source
Applied Surface Science
Publisher
Elsevier BV
Volume
746
Pages
167558–167558
Publication date
15 June 2026
Language
EN