Impact of spacer dielectric engineering on advanced nanosheet FET performance across different gate lengths

Current Applied Physics 2026

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Authors: M. Balasubrahmanyam, Ekta Goel
DOI: 10.1016/j.cap.2026.07.007
Cited by: 1
References: 33

Fields of Study & Subjects

Advancements in Semiconductor Devices and Circuit Design Ferroelectric and Negative Capacitance Devices Semiconductor materials and devices

Publication details

Journal / source
Current Applied Physics
Publisher
Elsevier BV
Volume
90
Pages
66–76
Publication date
10 July 2026
Language
EN