Interface-driven resistive switching and synaptic behavior in the graphene oxide-based memristive devices

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Authors: Phu-Quan Pham, Phu-Quan Pham, Trung Ngoc Bao Duong, Beshoy Nasr, Masamichi Yoshimura, Ngoc Kim Pham
Cited by: 1
References: 48

Fields of Study & Subjects

Advanced Memory and Neural Computing Transition Metal Oxide Nanomaterials Ferroelectric and Negative Capacitance Devices

Publication details

Journal / source
Carbon
Publisher
Elsevier BV
Volume
251
Pages
121316–121316
Publication date
28 January 2026
Language
EN