Ultrawide-bandgap diamond/ε-Ga2O3 pn heterojunction for self-powered solar-blind photodetection and high-temperature operation
Fields of Study & Subjects
Ga2O3 and related materials
Advanced Photocatalysis Techniques
GaN-based semiconductor devices and materials
Publication details
- Journal / source
- Carbon
- Publisher
- Elsevier BV
- Volume
- 251
- Pages
- 121335–121335
- Publication date
- 4 February 2026
- Language
- EN