UV-curable resin–induced transition to interface-type resistive switching in ZnO synaptic devices for neuromorphic computing

Chemical Engineering Journal 2026

View at publisher

Authors: Seung Jun Yim, Hyung Bin Park, J. Kim

DOI: 10.1016/j.cej.2026.172735

Cited by: 1

References: 76

Fields of Study & Subjects

Advanced Memory and Neural Computing Transition Metal Oxide Nanomaterials Ferroelectric and Negative Capacitance Devices

References 76