Cu-driven defect engineering on WS2 boosts low-temperature NH3-SCR activity and suppresses SO2 poisoning of VCuWS2/Ti catalyst

Read full text
Authors: Dong‐Hyeok Kim, Su-Jin Kim, Myeung-jin Lee, Dahye Park, Bora Ye, Bora Jeong, Do-Hyun Kim, Seungho Cho, Hong‐Dae Kim
Cited by: 0
References: 42

Abstract

Herein, we evaluated how tungsten disulfide (WS 2 ) enhances the low-temperature activity and sulfur resistance of a catalyst for the selective catalytic reduction of NO X with NH 3 (NH 3 -SCR). Although the sulfur layer on the surface of WS 2 improves sulfur resistance, active sites are poor due to the dense sulfur layer on the surface of WS 2 . To solve this problem, we performed catalytic etching using Cu. The pore structure formed via catalytic etching created the additional active sites, resulting in an improvement in the catalyst activity. Moreover, as Cu-based catalysts are typically used in low-temperature environments, an increase in activity at low temperatures was observed. As a result, the catalyst loading of etched WS 2 demonstrated 90% SCR performance at 250°C with SO 2 300 ppm.

Fields of Study & Subjects

Electrocatalysts for Energy Conversion Ammonia Synthesis and Nitrogen Reduction Catalytic Processes in Materials Science

Publication details

Journal / source
Chemical Engineering Journal Advances
Volume
28
Pages
101449–101449
Publication date
2 September 2026
Language
EN