Crystallinity and stoichiometry engineering in TiO2 thin films via O3 post-treatment for enhanced dielectric properties
Fields of Study & Subjects
Semiconductor materials and devices
Copper Interconnects and Reliability
Ferroelectric and Negative Capacitance Devices
Publication details
- Journal / source
- Ceramics International
- Volume
- 52
- Issue
- 11
- Pages
- 16622–16630
- Publication date
- 12 February 2026
- Language
- EN